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| BC 807, BC 808 PNP Silicon AF Transistors * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage * Comlementary types: BC 817, BC 818 (NPN) 3 2 1 VPS05161 Type BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 Maximum Ratings Parameter Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Symbol VCEO VCBO VEBO BC 807 45 50 5 500 1 100 200 330 150 BC 808 25 30 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg mA A mA mW C -65 ... 150 Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS 285 215 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu 1 Sep-27-1999 BC 807, BC 808 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V hFE -grp. 16 hFE -grp. 25 hFE -grp. 40 DC current gain 1) IC = 300 mA, VCE = 1 V hFE -grp. 16 hFE -grp. 25 hFE -grp. 40 Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA VCEsat VBEsat hFE 60 100 170 0.7 1.2 V V hFE 100 160 250 160 250 350 250 400 630 IEBO 100 nA ICBO 50 A ICBO 100 nA BC 807 BC 808 V(BR)EBO BC 807 BC 808 V(BR)CBO 50 30 5 V(BR)CEO 45 25 V typ. max. Unit 1) Pulse test: t 300s, D = 2% 2 Sep-27-1999 BC 807, BC 808 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 60 Ccb 10 fT 200 typ. max. Unit MHz pF 3 Sep-27-1999 BC 807, BC 808 Total power dissipation Ptot = f (TA*;TS ) Transition frequency fT = f (IC) VCE = 5V * Package mounted on epoxy EHP00209 400 Ptot mW 10 3 fT MHz 5 EHP00210 300 TA 200 TS 10 2 5 100 0 0 50 100 C TA ; TS 150 10 1 10 0 10 1 10 2 mA 10 3 C Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max Ptot DC tp D= T tp T EHP00212 Collector cutoff current ICBO = f(TA) VCBO = 25V 10 5 EHP00213 CBO nA 10 4 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 3 max 10 2 typ 10 1 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 0 0 50 100 C TA 150 4 Sep-27-1999 BC 807, BC 808 Base-emitter saturation voltage IC = f(VBEsat ), hFE = 10 10 3 EHP00214 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10 10 3 EHP00215 C mA 150 C 25 C -50 C C mA 150 C 25 C -50 C 10 2 5 10 2 5 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 1.0 2.0 3.0 V 4.0 10 -1 0 0.2 0.4 0.6 V 0.8 V BEsat V CEsat DC current gain hFE = f(IC) VCE = 1V 10 3 h FE 5 100 C 25 C -50 C 10 5 2 EHP00216 10 1 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 C 5 Sep-27-1999 |
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